Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 44: Graphene: Electronic Properties, Structure and Substrate Interaction

O 44.9: Poster

Dienstag, 8. März 2016, 18:15–20:30, Poster E

Epitaxial graphene via flash annealing of SiC studied by VT-STM — •Ismail Baltaci, Malte Schulte, Eugenia Wodopian, Harry Ritter, and Carsten Westphal — Experimentelle Physik 1, TU Dortmund, Otto-Hahn-Strasse , 44227 Dortmund, Germany

Graphene has a charge carrier mobility which is two magnitudes larger than in SiC. Therefore graphene is of particular relevance for the semiconductor industry, e.g. as a new material for transistors.

There are different methods which should yield large and homogeneous graphene layers. Here we concentrate on an epitaxial growth based on cyclic heating of SiC, known as flash annealing. The hydrocarbon contaminations are desorbed during degasing SiC at 600^∘ C. Heating up to 1400^∘ C leads to a sublimation of Si. The remaining carbon atoms reconstruct in a hexagonal structure forming large graphene layers.

In addition to the flash annealing we are using hydrogen etching to achieve a high quality and flat SiC surface prior to the annealing steps. A Si- or Ar-flux during the annealing reduces the Si-sublimation and thus increases the graphene quality. In order to optimize the procedure multiple parameters have to be taken in account. Imaging the surface of SiC/Graphene is achieved by VT-STM.