Regensburg 2016 – scientific programme
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O: Fachverband Oberflächenphysik
O 45: Graphene: Adsorption, Intercalation and Doping
O 45.1: Poster
Tuesday, March 8, 2016, 18:15–20:30, Poster E
Intercalation of epitaxial graphene on SiC by antimony — •Susanne Wolff1, Sarah Roscher1, Martina Wanke1, Florian Speck1, Christian Raidel1, Marcus Daniel2, Felix Timmermann3, and Thomas Seyller1 — 1TU Chemnitz, Institut für Physik, Technische Physik, Germany — 2TU Chemnitz, Institut für Physik, Oberflächen- und Grenzflächenphysik, Germany — 3Universität Augsburg, Institut für Physik, Experimentalphysik IV, Germany
Graphene on SiC is grown epitaxially by sublimation growth. The first carbon layer grown is still covalently bound to the Si atoms of the substrate and therefore electronically inactive. Intercalation of epitaxial graphene on SiC decouples the buffer layer from the SiC substrate making it electronically active. In addition, intercalation can manipulate the structural and electronic properties. Thereby graphene can be adjusted for device applications.
In our x-ray photoelectron spectroscopy studies we investigated the intercalation of antimony on epitaxial graphene on SiC(0001). Antimony was evaporated from a Knudsen cell by molecular beam epitaxy at the surface and subsequently annealed with in a temperature range of 400°C to 500°C. Antimony shows different behavior for intercalation in ultra-high vacuum and argon atmosphere.