Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 45: Graphene: Adsorption, Intercalation and Doping
O 45.3: Poster
Dienstag, 8. März 2016, 18:15–20:30, Poster E
Crystalline Xe underneath a monolayer of hexagonal boron nitride — •Philipp Valerius1, Charlotte Herbig1, Mohammad Alif Arman2, Jan Knudsen2, 3, and Thomas Michely1 — 1II. Physikalisches Institut, Universität zu Köln, Zülpicher Str. 77, 50937 Köln, Germany — 2Division of Synchrotron Radiation Research, Lund University, Box 118, 22100 Lund, Sweden — 3MAX IV Laboratory, Lund University, Box 118, 22100 Lund, Sweden
Exposing a monolayer of hexagonal boron nitride on Ir(111) at room temperature to Xe irradiation in the energy range from a few 100 eV to a few 1000 eV causes amorphization of the 2D layer material, as shown by low energy electron diffraction. Surprisingly, upon annealing the hexagonal boron nitride recovers to perfection, except of vacancy islands resulting from sputtering and blisters formed due to aggregation of implanted species. With scanning tunneling microscopy we image through the hexagonal boron nitride blister lid and find a superstructure corresponding in lattice parameter to what we expect for a crystalline Xe layer. X-ray photoelectron spectroscopy experiments confirm this interpretation. We conclude that due to the strong adhesion of hexagonal boron nitride to Ir(111) the pressure inside the blisters is in the GPa range. An additional peculiar feature of our experiments are noble gas filled hexagonal boron nitride blisters, which are surrounded only by bare Ir(111).