Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 46: 2D Materials beyond Graphene: TMDCs, Slicene and Relatives
O 46.1: Poster
Dienstag, 8. März 2016, 18:15–20:30, Poster E
Growth and Characterization of Thin MoS2 Films on the Buffer Layer on SiC(0001) — •Adrian Schütze1, Martina Wanke1, Florian Speck1, Ovidiu Gordan2, Gregor Nordheim1, Thomas Seyller1, and Dietrich R. T. Zahn2 — 1Professur für Technische Physik, TU Chemnitz, Germany — 2Professur für Halbleiterphysik, TU Chemnitz, Germany
Layered 2D metal dichalcogenides such as MoS2 are semiconductors with the unique property to transform from an indirect to a direct semiconductor depending on the number of layers. As such they are offering new possibilities for electronic applications. In this work, we study the large-scale chemical vapor deposition of thin layers of MoS2 on the so-called buffer layer on SiC(0001), a graphene-like reconstruction with covalent bonds to the SiC substrate [1]. The buffer layer was grown in Ar at atmospheric pressure as described elsewhere [2]. MoS2 was synthesized from MoCl5 and sulfur powder [3] with Ar as carrier gas. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and low-energy electron diffraction were used to characterize the chemical composition and structure of the samples. The thickness of the deposited MoS2 is estimated to approximately 2 or 3 monolayers from XPS spectra and compared to Raman spectroscopy and AFM results. In addition, XPS data suggesting sulfur intercalation of the buffer layer during the CVD process are presented.
[1] K.V. Emtsev et al., Phys. Rev. B 77, 155303 (2008).
[2] M. Ostler et al., Phys. Status Solidi B 247, 2924 (2010).
[3] Y. Yu et al., Sci. Rep. 3, 1866 (2013).