Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 46: 2D Materials beyond Graphene: TMDCs, Slicene and Relatives
O 46.6: Poster
Tuesday, March 8, 2016, 18:15–20:30, Poster E
Monolayer epitaxial hexagonal boron nitride on Ir(111) functionalization by caesium adsorption and intercalation — •Jiaqi Cai1,2, Wouter Jolie2, Caio Silva1, Christoph Schlueter3, Marin Petrovic3, Marko Kralj4, Tien-Lin Lee4, and Carsten Busse1,2 — 1Institut für Materialphysik, Münster, Germany — 2II. Physikalisches Institut, Köln, Germany — 3Diamond Light Source Ltd, Didcot, United Kingdom — 4Institut za fiziku, Zagreb, Croatia
Being a wide band gap insulator, hexagonal boron nitride monolayer (hBN) is an important member of the two-dimensional-material family. However, detailed information on the band structure remains unclear. In this respect, adsorption and intercalation of alkali metal on epitaxial hBN are easy routes to investigate its electronic structure.
Here, we report our study on caesium deposition on hBN/Ir(111). Scanning tunneling microscopy/spectroscopy (STM/STS), x-ray photoelectron spectroscopy (XPS), x-ray standing waves (XSW), and angle-resolved photoemission spectroscopy (ARPES) techniques are used to study the morphological and electronic properties of the system. The density and location of caesium (intercalated or adsorbed) varies when different deposition conditions are applied. Accordingly, different shifts of the hBN electronic bands occur in different caesium configurations. The largest shift towards higher binding energy obtained is 3.63 eV. Meanwhile no sign of the conduction band is observed in the ARPES results. This shows hBN has a band gap larger than 5.95 eV.