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O: Fachverband Oberflächenphysik

O 48: Electronic Structure: Surface Magnetism and Spin Phenomena

O 48.2: Poster

Dienstag, 8. März 2016, 18:15–20:30, Poster E

High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling — •Taishi Chen — Max Plank Institute for Chemical Physics of Solids, 01187 Dresden, Germany

Magnetically doped topological insulators (MTIs) are emerging as a new platform of dilute magnetic semiconductors (DMSs) as a result of growing interest in topological magnetoelectric effect, the quantum spin/anomalous Hall Effect, and Dirac fermion-mediated magnetic coupling physics [1]. However, the traditional transition metal magnetic elements doped topological insulators are often hindered by the inadequate material quality, which is demonstrated by the low mobility of the samples [2-4]. In this work [5], we show the successful preparation of a series of new Sm-doped Bi2Se3 MTIs, which exhibit ferromagnetism up to about 52 K and a suppressed bulk electron carrier concentration as low as 1018 cm*3 in order. Clear Shubnikov*de Haas oscillations are observed in these samples. All evidence suggests that Sm-doped Bi2Se3 is a candidate high-mobility MTI.

References [1] X. L. Qi, et al., Physical Review B 78, 195424 (2008). [2] C. Z. Chang, et al., Science 340, 6129, (2013). [3] C. Z. Chang, et al., Nature Materials 14, 5, (2015). [4] Y. L. Chen, et al., Science 329, 5992, (2010). [5] T. S. Chen, et al., Advanced Materials 27, 33, (2015).