Regensburg 2016 – scientific programme
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O: Fachverband Oberflächenphysik
O 65: Organic Photovoltaics and Electronics
O 65.7: Talk
Wednesday, March 9, 2016, 17:00–17:15, H2
Vertical Organic Field-Effect Transistors - Functional Principles and Applications — •Alrun Aline Günther1, Michael Sawatzki1, Christoph Hoßbach2, Petr Formánek3, Daniel Kasemann1,4, Johannes Widmer1, Johann W. Bartha2, and Karl Leo1,5 — 1Institut für Angewandte Photophysik, TU Dresden, Germany — 2Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden, Germany — 3Leibniz-Institut für Polymerforschung Dresden e.V., Germany — 4currently: CreaPhys GmbH, Dresden, Germany — 5Fellow of the Canadian Institute for Advanced Research, Toronto (ON), Canada
Vertical organic field-effect transistors (VOFETs) are a means to overcome the limitations of conventional organic field-effect transistors (OFETs). At present however, they often suffer from two major drawbacks: performance limitation by contact effects and limitation to certain materials and processing techniques, making a controlled shift of parameters such as the transistor threshold voltage difficult. Here, we present p- and n-type VOFETs operating in the accumulation and inversion regimes. By introducing contact doping, we are able to increase the transconductance and On/Off ratio of VOFETs by an order of magnitude. We further show that the realisation of inversion VOFETs is possible and can shift the threshold voltage in a controlled manner, while reducing the Off state current of VOFETs through reduction of the source-drain leakage current.