Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 65: Organic Photovoltaics and Electronics
O 65.8: Vortrag
Mittwoch, 9. März 2016, 17:15–17:30, H2
Vertical Organic Light Emitting Transistors for Investigation of Charge Transport in VOFETs — •Franz Michael Sawatzki1, Alrun Günther1, Duyhai Doan2, Christoph Hossbach3, Petr Formánek4, Daniel Kaseman1,5, Johannes Widmer1, Thomas Koprucki2, and Karl Leo1,6 — 1Institut für Angewandte Photophysik, Technische Universität Dresden, Germany — 2Weierstraß-Institut für Angewandte Analysis und Stochastik, Leibniz-Institut im Forschungsverbund Berlin e. V., Germany — 3Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Germany — 4Leibniz-Institut für Polymerforschung Dresden e.V., Germany — 5currently: CreaPhys GmbH, 01257 Dresden, Germany — 6Fellow of the Canadian Institute for Advanced Research (CIFAR), Toronto, Ontario M5G 1Z8, Canada
The vertical organic field effect transistor (VOFET) offers many technological advantages due to its very short geometric channel length. However, in contrast to the standard lateral organic field effect transistor (OFET), the basic physics and working principles are not yet well known. Here, we compare results regarding the charge transport obtained from simulations with measured charge carrier density distributions. The latter ones are obtained from the light emission of vertical organic light emitting transistors (VOLETs). These devices are a combination of an organic light emitting diode (OLED) and a VOFET, which allow to locally resolve the current path. We show the dependence of the channel size and geometry on the gate-source voltage, the drain-source voltage, and the source geometry.