Regensburg 2016 – scientific programme
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O: Fachverband Oberflächenphysik
O 65: Organic Photovoltaics and Electronics
O 65.9: Talk
Wednesday, March 9, 2016, 17:30–17:45, H2
Ultra-High Current Densities in Organic Transistors — •Markus P. Klinger, Axel Fischer, Felix Kaschura, Daniel Kasemann, Johannes Widmer, and Karl Leo — Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr Str. 1, 01069 Dresden
Organic transistors are considered for flat panel or flexible displays, radio identification systems, and sensor arrays. Much effort has been spent to optimize the charge carrier mobility and to reduce the channel length of organic field-effect transistors (OFETs). Likewise, new device concepts have been introduced based on charge transport perpendicular to the substrate utilized in so-called vertical organic transistors. One representative is the high-performing organic permeable-base transistor (OPBT) [1,2]. Here, we show that this device is determined by space-charge limited current (SCLC) in the on-state. Thus, OPBTs can drive as much current as possible for a certain thickness of semiconducting material. Using C60 with a low charge carrier mobility of about 0.025 cm2 V−1s−1 in the vertical direction, current densities of more than 600 A cm−1 are reached at voltages below 6 V. This performance can be achieved as the total thickness of the device is in the range of 100 nm. With that, OPBTs can easily outperform OFETs in terms of current per footprint area.
[1] M. P. Klinger et al., Adv. Mater. (2015), 27(47);
[2] A. Fischer et al., Appl. Phys. Lett. (2012), 101, 213303