Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 70: Nanostructures at Surfaces: Other Aspects

O 70.3: Poster

Mittwoch, 9. März 2016, 18:15–20:30, Poster A

Charge detection of quantum dots in indium arsenide nanowires — •Felix Jekat¹, Kilian Flöhr¹, Sebastian Heedt², Marcus Liebmann¹, Stefan Trellenkamp³, Torsten Rieger², Jürgen Schubert², Werner Prost⁴, Thomas Schäpers², and Markus Morgenstern¹ — ¹II. Physikalisches Institut B, RWTH Aachen — ²PGI-9, Forschungszentrum Jülich, Germany — ³PGI-8, Forschungszentrum Jülich, Germany — ⁴Center for Semiconductor Technology and Optoelectronics, University of Duisburg-Essen

InAs nanowires have been shown to be suitable as tips for scanning tunneling microscopy (STM) with similar quality compared to tungsten tips, as demonstrated by Flöhr et al. [1]. We present devices with the goal to enable time-resolved counting of single electrons directly at these InAs nanowire STM tips. Two configurations and preliminary transport measurements are presented. The first device configuration utilizes a Quantum Point Contact as charge detector, adapted from Shorubalko et al. [2]. The second device is realized by measuring the conductance variation of another nanowire placed in close vicinity to the first one. This nanowire is coupled by a floating gate to the first nanowire over a distance of several micrometers [3].

[1] K. Flöhr et al. "Scanning tunneling microscopy with InAs nanowire tips", Appl. Phys. Lett. 101, 243101 (2012) [2] I. Shorubalko et al. "Self-Aligned Charge Read-Out for InAs Nanowire Quantum Dots", Nano Lett. 8, 382 (2008) [3] Y. Hu et al. "A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor", Nature Nanotechnol. 2, 622 (2007)