Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 73: Surface Dynamics: Reactions and Elementary Processes

O 73.9: Poster

Mittwoch, 9. März 2016, 18:15–20:30, Poster A

Electrochemical etching of proton irradiated p-GaAs — •Alrik Stegmaier, Ulrich Vetter, and Hans Hofsäss — 2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Microelectromechanical systems (MEMS) combine electrical and mechanical features on the micrometer scale and are used for an increasing number of applications, including energy harvesters, accelerometers and pressure sensors [1]. Proton beam writing (PBW) is a maskless lithographic method for the production of microstructures for such applications [2]. With PBW it is possible to produce three dimenstional structures by varying only the fluence of the proton irradiation on a p-GaAs sample, followed by electrochemical etching [3].

As such, the electrochemical etching of the sample is of large importance for producing high quality final structures. While electrochemical etching of defect poor GaAs is reasonably well understood [4] there is comparatively little published work on highly irradiated material.

Here the electrochemical etching with KOH of p-GaAs irradiated with protons (energies up to several MeV) is investigated experimentally, improving upon previous findings [5].

[1] V. Cimalla et al., J. Phys. D: Appl. Phys., 40(20), 6386, 2007

[2] J.A. van Kan et al., Appl. Phys. Lett., 83(8), 1629, 2003

[3] P. Mistry et al., Nucl. Instr. Meth. Phys. Res. B, 237, 188, 2005

[4] P. Allongue et al., J. Electroanal. Chem., 317, 77-99, 1991

[5] M. Schulte-Borchers et al., J. Micromech. Microeng., 22, 025011, 2012