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O: Fachverband Oberflächenphysik

O 78: Nanostructures at Surfaces IV: Various Aspects

O 78.2: Vortrag

Donnerstag, 10. März 2016, 10:45–11:00, S052

Scanning tunneling potentiometry of resistivity dipoles in thin Bismuth films — •Felix Lüpke, Stefan Korte, Vasily Cherepanov, and Bert Voigtländer — Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany, and JARA-Fundamentals of Future Information Technology

We present scanning tunneling potentiometry measurements of thin Bismuth films using a multi-tip scanning tunneling microscope. Defects in the Bismuth films prepared on Si(111) result in localized electric dipoles when a lateral current is injected into the film. We map the potential landscape around such defects and analyze them with respect to classical diffusive transport effects and the Landauer dipole.