Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 79: Graphene III: Electronic Properties

O 79.1: Vortrag

Donnerstag, 10. März 2016, 10:30–10:45, S053

PEEM of epitaxial graphene on silicon carbide — •Richard Hönig, Christoph Keutner, Cornelis Hilscher, Ulf Berges, and Carsten Westphal — Experimentelle Physik I, TU Dortmund, Otto-Hahn-Straße 4, 44227 Dortmund, Germany

Graphene is a promising candidate for two-dimensional electronic structures. Especially epitaxial graphene on silicon carbide (SiC) is in the focus of current studies, due to the well-established infrastructure for SiC in the semiconductor-industry.

We present photoemission electron microscopy (PEEM) studies of epitaxial graphene, grown by confinement controlled sublimation (CCS). This technique is a suitable tool for producing large areas of homogeneous graphene. The resulting flake-sizes of graphene exceed the resolution of scanning tunneling microscopy. However, the PEEM-technique provides a better suited resolution up to the mesoscopic scale. Hence, PEEM was chosen to study and characterize these graphene/SiC-samples.

Here, we will demonstrate the first characterization procedures and results. In the future, samples with an adequate amount of graphene will be used for further studies, including the real-time imaging of intercalation-processes.