Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 79: Graphene III: Electronic Properties
O 79.2: Vortrag
Donnerstag, 10. März 2016, 10:45–11:00, S053
Graphene growth on structured SiC — •Alexander Stöhr1, Jens Baringhaus2, Aleixei Zakharov3, Christoph Tegenkamp2, and Ulrich Starke1 — 1Max-Planck-Institut für Festkörperforschung, Stuttgart, Deutschland — 2Leibniz-Universität Hannover, Hannover, Deutschland — 3MAX IV Laboratory, Lund University, Lund, Schweden
Despite its missing band gap, graphene is reviewd as a potential successor of silicon for applications in logical devices. Nowadays, few techniques are available to introduce a band gap into the band structure of graphene. One of the most promising methods is the confinement of its charge carriers into quasi one-dimensional stripes, so called graphene nanoribbons. Unfortunately, the usual approach to structure graphene by lithography techniques leads to disorder and defects at the edges of the nanoribbons, which then dominat the electronic states of the ribbon. To circumvent this problem, we structure our SiC-crystal prior to the graphene growth. After the growth process a faceting of the sidewalls by 23-28° was observed by AFM. On those areas which are inclined towards the non-structured surface, diffraction spots and a π-band were observed in microscopic LEED and ARPES, respectively. Those experimental findings confirm the growth of ordered graphene on the facets.