Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 79: Graphene III: Electronic Properties
O 79.6: Vortrag
Donnerstag, 10. März 2016, 11:45–12:00, S053
Nano-scaled graphene solution-gated field-effect transistors — •Peter Knecht1, Benno Martin Blaschke1, Karolina Stoiber1, Martin Letter1, Simon Drieschner1, and Jose Antonio Garrido2 — 1Walter Schottky Institut, TU München, Garching, Germany — 2Catalan Institute of Nanoscience and Nanotechnology, Barcelona, Spain
Graphene solution-gated field-effect transistors (SGFETs) are a promising biosensing platform, due to their unique properties such as high charge carrier mobility, low electronic noise, good electrochemical performance and an excellent biocompatibility. The recording of cell action potentials using graphene SGFETs has already been demonstrated. However, the sensing area of several hundred square micrometer is not small enough to resolve potential changes on a subcellular level. In this work, we present the fabrication of nano-scaled graphene SGFETs where the transistor area is reduced to 0.01 square micrometer. The dependence of the transistor's transconductance and the electronic low frequency noise on size and shape of the sensing area is studied. In addition, we investigate if the reduced device size leads to a more pronounced dependence of the device's performance on the graphene quality. Finally, the recording of cell action potentials using the nano-scaled devices is demonstrated and compared to micro-scaled graphene SGFETs.