Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 79: Graphene III: Electronic Properties
O 79.7: Vortrag
Donnerstag, 10. März 2016, 12:00–12:15, S053
Graphene wrinkles: their conductivity, crystallinity, and reactivity — •Raul D. Rodriguez1,2, Tao Zhang3, Jana Kalbacova1,2, Devang Parmar1, Akhil Nair1, Zoheb Khan1, Mahfujur Rahaman1, Ihsan Amin2, Jacek Gasiorowski1, Evgeniya Sheremet1, Rainer Jordan2, Michael Hietschold1, and Dietrich R.T. Zahn1,2 — 1Institut für Physik, Technische Universität Chemnitz, Chemnitz 09107, Germany — 2Center for Advancing Electronics Dresden (cfaed), Germany — 3Professur für Makromolekulare Chemie, Department Chemie, Technische Universität Dresden, Mommsenstrasse 4, 01062 Dresden, Germany
Wrinkles appear to be unavoidable in graphene produced by chemical vapor deposition (CVD) on copper. Despite its generality, isolating the role of wrinkles on overall electrical conductivity, crystallinity, and chemical reactivity of CVD-grown graphene remains an open issue. We investigate the reactivity of basal planes and wrinkles in graphene with polystyrene bromide (PSBr) and correlate it with electrical con- ductivity, defect concentration, and doping with a special resolution from the micro- to the nano-scale. We show that wrinkles dominate the chemical reactivity of CVD graphene, and moreover, that doping with the same functionality can yield opposite electronic type to the basal plane regions (n- vs. p-type). These results expand our under- standing of wrinkles in CVD graphene towards engineering for novel applications.