Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 83: Heterostructures and Interfaces

O 83.8: Vortrag

Donnerstag, 10. März 2016, 11:45–12:00, H17

Photoelectrochemical investigation of TiO₂-coated InGaN/GaN nanowires under visible light irradiation — •Paula Neuderth¹, Adina Frank¹, Pascal Hille¹, Christian Reitz², Jörg Teubert¹, Jörg Schörmann¹, Roland Marschall³, and Martin Eickhoff¹ — ¹I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Gießen, Germany — ²Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen, Germany — ³Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Gießen, Germany

Composite structures of InGaN/GaN nanowire heterostructures with a thin anatase titania coverage were prepared by combination of molecular beam epitaxy and atomic layer deposition and investigated with respect to their photoelectrochemical properties. The bandgap of InGaN can be adjusted in the visible regime which makes it suitable for solar-driven photocatalytic reactions such as solar water splitting. In these nanocomposite structures an anodic photocurrent under visible excitation was gained. However, the presence of a thin (2 - 10 nm) anatase titania film increases the photocurrent significantly although direct generation of carriers in the titania is not possible. The influence of the titania coating on charge separation, charge transfer and surface recombination will be discussed by comparison to photoluminescence measurements in electrochemical environment.