Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 87: Metal Substrates: Structure, Epitaxy and Growth

O 87.10: Vortrag

Donnerstag, 10. März 2016, 17:30–17:45, S053

Structure and morphology of sulfur-terminated Si(111) — •Lars Buß, Thomas Schmidt, and Jens Falta — Universität Bremen, Bremen, Germany

The preparation of sulfur-terminated Si(111)-surfaces aims at the functionalization and passivation of the surface as a template for the growth of layered materials thin films, as the sulfur-termination prevents strong chemical bonding between the substrate and the adsorbate. Therefore the surface-reconstruction and the morphology of the sulfur-terminated Si(111)-surface have been examined with both SPA-LEED and STM. In a small temperature range, a phase transition from (7 × 7) to a reconstruction, previously reported as (4 × 4) by Metzner et al. (Surf. Sci. 377 (1997) 71), was found. Our analysis, however, reveals that this reconstruction is actually a ( 20
12 )-reconstruction, which occures in three rotational domains on the surface. Furthermore we observe that the surface is etched upon prolonged exposure to the sulfur-flux.