Regensburg 2016 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

O: Fachverband Oberflächenphysik

O 89: Oxides and Insulator Surfaces II

O 89.4: Talk

Thursday, March 10, 2016, 15:45–16:00, H4

Thin Silica films on Ru(0001) — •Hagen William Klemm, Gina Peschel, Alexander Benedikt Fuhrich, Mauricio Prieto, Dietrich Menzel, Thomas Schmidt, and Hans-Joachim Freund — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4, 14195 Berlin, Germany

Ultrathin SiO₂ and metal doped silicate layers on Ru(0001) offer various possibilities as model systems for understanding the relationship between structure and reactivity of very complex material systems like Zeolites. With the aberration corrected spectro-microscope SMART at the synchrotron light source BESSY-II in Berlin, allowing high-resolution XPEEM, µXPS, valence band mapping, µ-LEED and LEEM, preparation conditions and their influence on the Silica layers were studied in situ at the mesoscopic scale. The deposited amount of Silicon and the oxidation conditions strongly influence the crystallographic and electronic structure of these Silica films. SiO2 bilayer films are of special interest, because they are only Van de Waals like bound to the Ru(0001) substrate and therefore lift off the support. Under special preparation conditions an oxidation front, followed by an oxygen intercalation could be observed.