Regensburg 2016 – scientific programme

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O: Fachverband Oberflächenphysik

O 89: Oxides and Insulator Surfaces II

O 89.9: Talk

Thursday, March 10, 2016, 17:15–17:30, H4

Growth and morphological characterization of thin vanadium dioxide films — •Mirco Schulz, Jon-Olaf Krisponeit, Jan Ingo Flege, and Jens Falta — Universität Bremen, Bremen, Germany

Vanadium dioxide exhibits a metal-insulator transition near room temperature, comprising a rich phenomenology that is still not fully understood. Close to the transition, the system responds sensitively to uniaxial substrate-induced stress, resulting in a wide variation of the transition temperature. In this contribution, thin VO₂ films were grown on TiO₂(001) and TiO₂(110) substrates by molecular beam epitaxy. Two different growth methods were used: first, vanadium evaporation under O₂ ambient and, second, cyclic vanadium deposition and post-annealing in O₂, following an approach by J. W. Tashman et al. [1]. For both methods the prevalence of the V⁴⁺ oxidation state was confirmed by x-ray photoelectron spectroscopy. The surface structure was analyzed with low energy electron diffraction, indicating an epitaxial growth on the substrate and good crystallinity of the films. While scanning tunneling microscopy revealed continuous films of VO₂ on both substrates, we found faceting in the case of (110) substrate orientation, but terraces on (001) substrates.

[1] J. W. Tashman et al., Appl. Phys. Lett. 104, 063104 (2014).