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O: Fachverband Oberflächenphysik

O 9: Nanostructures at Surfaces I

O 9.8: Vortrag

Montag, 7. März 2016, 12:15–12:30, H6

Interaction of dangling bond bound states on boron passivated Si(111) — •Manuel Siegl — London Centre for Nanotechnology University College London 17-19 Gordon St London WC1H 0AH United Kingdom

Scanning tunnelling microscopy (STM) was used in the creation of quantum structures such as quantum corrals showing bound electron states across multiple lattice sites on a Fermi-level pinned metal surface [1]. Taking degenerately boron doped Si(111), we extend STM-imaging to spatially resolved scanning tunnelling spectroscopy maps (CITS) [2] in order to examine the electronic structure of point defect induced bound states on a semiconductor Fermi-level pinned surface [3]. We investigate the site dependent interaction of these atomic size quantum dots in varying arrangements, with changing dangling bond separation and crystallographic direction. The experimental results are then compared to first principle density function theory (DFT) calculations and we confirm a non-linear constructive interference between the excited states of positively charged dangling bonds [4].

References [1] M. F. Crommie et al., Science 262, 218 (1998). [2] R. J. Hamers et al., PRL 56, 18 (1986). [3] M. Berthe et al., PRL 97, 206801 (2006) [4] H. Hedgeland, M. Siegl et al. In preparation (2016).