Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 95: Graphene IV: Electronic Properties and Structure

O 95.6: Vortrag

Freitag, 11. März 2016, 11:45–12:00, S051

Electronic structure of partial dislocations in bilayer graphene — •Dominik Weckbecker and Sam Shallcross — Lehrstuhl für theoretische Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7 B2, 91058 Erlangen, Germany

We present electronic structure calculations for the partial dislocations recently imaged in bilayer graphene on SiC [1,2]. We use an effective field method which allows us to treat both a realistic experimental situation of many disordered dislocations in a sample area of a square micrometer as well as model systems in which the dislocations are ordered. We find near the Dirac point a charge pooling on the bilayer graphene segments, as well as a curious energy dependent localization on the partial lines and partial nodes. We consider the presence of an external out-of-plane magnetic field and identify current circulations associated with partial lines.

[1] B. Butz, C. Dolle, F. Niekiel, K. Weber, D. Waldmann, H. B. Weber, B. Meyer, E. Spiecker, Nature 505, 533 (2014). [2] F. Kisslinger, C. Ott, C. Heide, E. Kampert, B. Butz, E. Spiecker, S. Shallcross, H. B. Weber, Nature Physics 11, 650 (2015).