Regensburg 2016 – scientific programme

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SYES: Symposium Frontiers of Electronic Structure Theory: Focus on Topology and Transport

SYES 6: Frontiers of Electronic Structure Theory: Focus on Topology and Transport IV

SYES 6.3: Talk

Thursday, March 10, 2016, 11:30–11:45, H24

Spin Hall effect in non-collinear antiferromagnets Mn3X (X=Sn, Ge, Ga) — •Yang Zhang^1,3, Yan Sun¹, Claudia Felser¹, and Binghai Yan^1,2 — ¹Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany — ²Max Planck Institute for the Physics of Complex Systems, 01187 Dresden, Germany — ³Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany

Recently, large anomalous Hall effect (AHE) was realized in non-collinear antiferromagnetic (AFM) compounds Mn3X (X=Sn, Ge, Ga). We have found that the nonzero Berry curvature -- origin of the AHE observed -- will lead to another topological effect, the spin Hall effect (SHE) in the titled compounds. We have systematically investigated the intrinsic SHE and revealed large spin Hall conductivity [~1000 ((*/e)*(S/cm)], which is comparable to that of the well-know SHE material Pt. Our work present a new family of AFM compounds for the room-temperature spintronic applications.