Regensburg 2016 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 13: Transport: Topological Insulators - 2D
(Joint session of DS, HL, MA, O and TT organized by TT)

TT 13.7: Vortrag

Montag, 7. März 2016, 16:45–17:00, H18

Terahertz properties of Dirac electrons and holes in HgTe films with critical thickness — •Uladzislau Dziom¹, Alexey Shuvaev¹, Nikolai Mikhailov², Ze Don Kvon², and Andrei Pimenov¹ — ¹Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria — ²Novosibirsk State University, Novosibirsk 630090, Russia

We present and discuss properties of mercury telluride (HgTe) films with critical thickness in far-infrared (THz) spectral range. Density of charge carriers is controlled, using contact-free optical gating by visible light. Transmission measurements in applied magnetic field demonstrate switching from hole to electron-like behavior, as illumination time increases. The cyclotron mass of the electrons, extracted from the data, shows a square root dependence upon the charge concentration in a broad range of parameters. This can be interpreted as a clear proof of a linear dispersion relations, i.e. Dirac-type charge carriers.