Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 22: Graphene: Fabrication
(Joint session of DS, DY, HL, MA, O and TT organized by HL)

TT 22.1: Vortrag

Montag, 7. März 2016, 17:45–18:00, H17

Growth and characterization of mono- and bilayer graphene nanoribbons grown on SiC(0001) — •Lauren Aranha Galves, Joseph Wofford, Uwe Jahn, João Marcelo J. Lopes, and Henning Riechert — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

Graphene Nanoribbons (GNRs) are promising for applications in nanoelectronics due to their unique properties. Unlike graphene sheets, GNRs possess a bandgap and the gap is inversely proportional to their width [1]. Additionally, bilayer GNRs offer the possibility to further tune their bandgap via the application of an external electric field [2]. The thermal decomposition of SiC surfaces is a suitable synthesis method for GNRs due to the control it offers over their size [3].

In this report we present the structural characterization of mono- and bilayer GNRs grown on SiC(0001) by surface graphitization. Bilayer GNRs were obtained via a post-growth air-annealing process [4]. The width of the ribbons were determined via atomic force microscopy (AFM) height and phase imaging as well as scanning electron microscopy (SEM), while the number of layers (i.e. mono or bilayer GNRs) were examined by Raman spectroscopy. Based on these measurements it was possible to identify an activation energy for the formation of the nanostructures and a lateral etching effect in the bilayer GNRs due to the air-annealing process.

[1] Barone et al., Nano Lett. 6, 2748 (2006); [2] Li et al., Eur. Phys. J. 64, 73 (2008); [3] Sprinkle et al. Nat. Nanotechnol. 5, 727 (2010); [4] Oliveira Jr. et al., Nat. Comm. 6, 7632 (2015).