Regensburg 2016 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 22: Graphene: Fabrication
(Joint session of DS, DY, HL, MA, O and TT organized by HL)
TT 22.3: Vortrag
Montag, 7. März 2016, 18:15–18:30, H17
High quality bilayer graphene from chemical vapor deposition on reusable copper — •Michael Schmitz1, Stephan Engels1,2, Luca Banszerus1, Kenji Watanabe3, Takashi Taniguchi3, Bernd Beschoten1, and Christoph Stampfer1,2 — 1JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany — 2Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany — 3National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
We recently introduced a dry transfer method for single-layer graphene grown by chemical vapor deposition (CVD) yielding ultra high quality graphene comparable to the best exfoliated samples [1]. Here, we demonstrate that this method can be extended to bilayer graphene. In particular, we show the fabrication and characterization of bilayer graphene/hexagonal boron nitride heterostructures using high quality CVD bilayer graphene grown on reusable copper foils. Raman measurements reveal a high structural quality [2]. We achieve carrier mobilities up to 45,000 cm2/(Vs) at 1.8 K and up to 17,000 cm2/(Vs) at room temperature outperforming all state-of-the-art CVD bilayer graphene devices. Finally, we show dual-gated transport measurements to investigate band-gap opening in our CVD grown bilayer graphene.
[1] L. Banszerus, M. Schmitz, S. Engels et al., Science Advances 1, e1500222 (2015)
[2] C. Neumann, S. Reichardt, P. Venezuela et al., Nature Communications 6, 8429 (2015)