Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 23: Quantum Information Systems
(Joint session of HL, MA, O and TT organized by HL)

TT 23.10: Vortrag

Dienstag, 8. März 2016, 12:15–12:30, H15

Controlled Implantation of Silicon Vacancy Layers for Quantum Applications in Bulk Silicon Carbide — •H. Kraus^1,2, C. Kasper², S.-I. Sato¹, M. Haruyama¹, S. Onoda¹, T. Makino¹, T. Ohshima¹, G. Astakhov², and V. Dyakonov^2,3 — ¹Japan Atomic Energy Agency, Takasaki, Gunma, Japan — ²Exp. Physics VI, Julius Maximilian University of Würzburg — ³ZAE Bayern, Würzburg

Quantum centers in silicon carbide (SiC) have already transcended their former reputation as mere performance-hampering defects. Their long spin lifetime, unique spin-preserving optical pumping mechanism^[1], and the possibility of downscaling to single-photon source level^[2,3] makes them viable candidates for a plethora of quantum applications in sensing, rf devices, and quantum computing.

One quantum center species, the silicon vacancy (V_Si), can be reliably and homogeneously produced in the bulk by electron or neutron^[3] irradiation. In contrast, a method to implant defects at a specific depth would be very interesting, especially when aiming for spatially separated centers for single photon sources. We present a study on proton irradiation to create a layer of V_Si in an irradiation-energy-tunable depth in bulk SiC. We discuss the spectroscopic response of this layer, and compare the V_Si depth profile—measured by confocal microscopy—with the H⁺ stopping power of silicon carbide. Finally, we extend this study on the effects of high energy heavy ion damage.

[1] H. Kraus et al., Nature Phys. 10, 157 (2014)

[2] M. Widmann et al., Nature Mater. 14, 164 (2015)

[3] F. Fuchs et al., Nature Commun. 6, 7578 (2015)