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09:30 |
TT 23.1 |
Nuclear spins as quantum memories for quantum networks and repeaters — •Andreas Reiserer, Norbert Kalb, Machiel Blok, Koen van Bemmelen, Tim Taminiau, and Ronald Hanson
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09:45 |
TT 23.2 |
Long distance coupling of resonant exchange qubits — •Maximilian Russ and Guido Burkard
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10:00 |
TT 23.3 |
Higher Order Spin Correlation in Semi-Conductor Quantum Dots — •Nina Fröhling, Jan Böker, and Frithjof Anders
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10:15 |
TT 23.4 |
Spin Decoherence in a Pulsed Quantum Dot System — •Natalie Jäschke and Frithjof Anders
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10:30 |
TT 23.5 |
A model for slow decoherence in semiconductor quantum dots — •Wouter Beugeling, Frithjof B. Anders, and Götz S. Uhrig
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10:45 |
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30 min. Coffee Break
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11:15 |
TT 23.6 |
Force sensing via individual nitrogen-vacancy spins in diamond mechanical resonator — Phani Peddibhotla, Michael Barson, Kumar Ganesan, Preeti Ovartchaiyapong, Berndt Koslowski, Ania Jayich, Steven Prawer, Neil Manson, Marcus Doherty, and •Fedor Jelezko
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11:30 |
TT 23.7 |
Identification of the positively charge Nitrogen Vacancy center in diamond — Helmut Fedder, •Sina Burk, Mathias Pfender, Nabeel Aslam, Sebastian Zaiser, Philipp Neumann, Andrej Denisenko, Patrick Simon, José Garrido, Martin Stutzmann, Marcus Doherty, Neil Manson, Audrius Alkauskas, and Jörg Wrachtrup
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11:45 |
TT 23.8 |
Electrical Charge State Control of Single Defects in Silicon Carbide — •Matthias Widmann, Sang-Yun Lee, Matthias Niethammer, Ian Booker, Takeshi Ohshima, Nguyen Tien-Son, Adam Gali, Erik Janzén, and Jörg Wrachtrup
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12:00 |
TT 23.9 |
Spin Coherence Time of Si Vacancies in Silicon Carbide Exceeding One Millisecond — •D. Simin, H. Kraus, A. Sperlich, T. Ohshima, G. V. Astakhov, and V. Dyakonov
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12:15 |
TT 23.10 |
Controlled Implantation of Silicon Vacancy Layers for Quantum Applications in Bulk Silicon Carbide — •H. Kraus, C. Kasper, S.-I. Sato, M. Haruyama, S. Onoda, T. Makino, T. Ohshima, G. Astakhov, and V. Dyakonov
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