Regensburg 2016 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 54: Transport: Carbon Nanotubes
TT 54.9: Vortrag
Mittwoch, 9. März 2016, 17:30–17:45, H22
Electron transport in defective metallic and semiconducting carbon nanotubes — •Fabian Teichert1,2,4, Andreas Zienert3, Jörg Schuster4, and Michael Schreiber2 — 1Dresden Center for Computational Materials Science (DCMS), Dresden, Germany — 2Institute of Physics, Technische Universität Chemnitz, Chemnitz, Germany — 3Center for Microtechnologies (ZfM), Technische Universität Chemnitz, Chemnitz, Germany — 4Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz, Germany
The present work describes the transport properties of metallic and semiconducting CNTs with randomly positioned realistic defects, namely mono- and divacancies. The calculations are based on a fast, linearly scaling recursive Green’s function formalism, allowing us to treat large systems quantum-mechanically. The electronic structure is described by a density-functional-based tight-binding model.
In [1], transmission spectra of metallic CNTs with many defects are studied comprehensively with a statistical analysis and diameter-dependent localization lengths are extracted. We extend this work to defect mixtures and show that the total localization length can be reduced to the ones of CNTs with one defect type. Based thereon, we show how to estimate or even predict the conductance of CNTs with an arbitrary number of defects of different types. Finally, we focus on defective semiconducting CNTs and show the influence of the structural parameters – the diameter and the chiral angle – on the conductance and the localization length.
[1] F. Teichert et al., NJP 16 (2014) 123026