Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 56: Graphene: Adsorption, Intercalation and Doping
(Joint session of DS, DY, HL, MA, O and TT organized by O)

TT 56.11: Vortrag

Mittwoch, 9. März 2016, 17:30–17:45, S053

Transformation of metallic boron into substitutional dopants in graphene on 6H-SiC(0001) — •Jessica Sforzini^1,2, Mykola Telychko^3,4, Ondrej Krejcio^3,4, Martin Vondracek⁵, Martin Svec³, Francois Bocquet^1,2, and Stephan Tautz^1,2 — ¹Peter Gruenberg Institut (PGI-3), Forschungszentrum Juelich, 52425 Juelich, Germany — ²Juelich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, 52425 Juelich, Germany — ³Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, CZ-16200 Prague, Czech Republic — ⁴Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, Praha 8, Czech Republic — ⁵Institute of Physics, Academy of Science of the Czech Republic, Na Slovance 2, 10, CZ-18228 Prague, Czech Republic

We investigate the development of the local bonding and chemical state of boron atoms during the growth of B-doped graphene on 6H-SiC(0001). Photoemission experiments reveal the presence of two chemical states, namely boron in the uppermost SiC bilayers and boron substituted in both the graphene and buffer layer lattices. We demonstrate the participation of the dopant in the π* electron system of graphene by the presence of the π* resonance in the near edge x-ray adsorption fine structure (NEXAFS) recorded at the B K-edge. The experimental fundings are supported by NEXAFS simulations.