Regensburg 2016 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 59: Low-Dimensional Systems: Poster Session
TT 59.15: Poster
Mittwoch, 9. März 2016, 15:00–18:30, Poster D
Oxygen vacancy induced two-dimensional electron system in disordered-crystalline LaAlO3/KTaO3 heterostructures — •Michael Zapf1, Judith Gabel1, Philipp Scheiderer1, Lenart Dudy1, Christoph Schlueter2, Tien-Lin Lee2, Michael Sing1, and Ralph Claessen1 — 1Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Germany — 2Diamond Light Source Ltd., Didcot, United Kingdom
Two-dimensional electron systems (2DESs) in oxide heterostructures based on SrTiO3 are considered to be a promising platform for future microelectronic technology. A variety of interesting properties such as ferromagnetism, resistive switching and superconductivity are linked to interfacial n-doping involving oxygen vacancies. The introduction of a high Z-cation with large spin-orbit coupling like Ta offers an exciting new parameter. We report on a new oxygen vacancy induced 2DES located at the interface of disordered LaAlO3 and crystalline KTaO3, which exhibits remarkably high electron mobilities and charge carrier concentrations. The number of charge carriers can be readily manipulated by the film thickness and irradiation with intense X-rays. Our synchrotron-based hard X-ray photoemission experiments provide a direct probe of the Ta 5d charge carriers at the buried interface to obtain information on the charge carrier density, its depth distribution, and the band structure.