Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 59: Low-Dimensional Systems: Poster Session

TT 59.17: Poster

Mittwoch, 9. März 2016, 15:00–18:30, Poster D

Electronic reconstruction at the interface between the Mott insulator LaVO₃ and the band insulator SrTiO₃ — •Martin Stübinger, Judith Gabel, Philipp Gagel, Michael Sing, and Ralph Claessen — Universität Würzburg, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), 97074 Würzburg, Germany

Akin to the well known oxide heterostructure LaAlO₃/SrTiO₃ (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV³⁺O₃ (LVO) and the non-polar band insulator STO. Since LaV³⁺O₃ tends to overoxidize to the thermodynamically more favourable LaV⁵⁺O₄ phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.