Regensburg 2016 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 66: Magnetic Heusler Materials, Semimetals und Oxides
(Joint session of MA and TT organized by MA)
TT 66.7: Vortrag
Donnerstag, 10. März 2016, 11:15–11:30, H34
Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless Semiconductors — •Hongying Jia1,2, Xuefang Dai2, and Guodong Liu2 — 1Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, D-52425 Jülich, Germany — 2School of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, P. R. China
Spin gapless semiconductors with-low spin magnetic moments are promising functional materials due to their fascinating potential for realistic applications. The ideal spin gapless semiconductors exhibit zero magnetic moment and low external magnetic fields, leading to smaller energy losses. However, spin gapless semiconductors with zero magnetic moments are rarely reported up to now. Therefore, it is necessary to clarify the differences in the origin of the band gap in two spin channels for spin gapless magnetic semiconductors with Heusler structure. In our work [1], the electronic, structural and magnetic properties of Ti2MnZ (Z=Al, Ga, In) compounds were systematically investigated using first-principles calculations. Our results demonstrate that these compounds are nearly spin gapless semiconductors and have a zero magnetic moment. The origin of the band gap in different spin directions will be discussed in detail. Besides, the effects of the lattice parameter and doping effects of the congeners on the width of the band gaps are demonstrated. These results will help to better understand the mechanism of spin gapless semiconductors and therefore promote the design of new spin gapless semiconductors.
[1] H. Y. Jia et al., AIP Advances 4, 047113 (2014)