Regensburg 2016 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 86: Graphene: Electronic Properties and Structure
(Joint session of DS, DY, HL, MA, O and TT organized by O)
TT 86.7: Talk
Friday, March 11, 2016, 12:00–12:15, S051
Deformation in graphene and few layer graphenes: interlayer gauge fields and optical deformations — •Nicolas Ray1, Fabian Rost1, Reena Gupta2, Sangeeta Sharma2, Oleg Pankratov1, and Sam Shallcross1 — 1Lehrstuhl für theoretische Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7 B2, 91058 Erlangen, Germany — 2Max-Planck-Institute for Microstructure Physics, Weinberg 2, 06120 Halle, Germany
We present a general theory of deformations in graphene and few layer graphenes. In single layer graphene we consider both acoustic and optical deformations, and show that the latter can generate chiral gap opening fields. For the case of few layer graphenes we derive a general interlayer gauge term that relates the local stacking vector to an off-diagonal non-Abelian field. We show that this general result reduces to well known cases such as the Bernal or twist graphene bilayer, but can also be used to treat more complex situations such as partial dislocations in bilayer graphene.