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TT: Fachverband Tiefe Temperaturen

TT 9: Graphene: Structure and Dynamics
(Joint session of DS, DY, HL, MA, O and TT organized by O)

TT 9.7: Vortrag

Montag, 7. März 2016, 12:15–12:30, H24

Plasma-assisted CVD graphene synthesis and characterization on nickel substrates — •Patricia Pop-Ghe, Lisa Krückemeier, Nicolas Wöhrl, and Volker Buck — Faculty of Physics and CENIDE, University of Duisburg-Essen, Lotharstr, 1, 47057 Duisburg, Germany

This work presents the synthesis of graphene by plasma-assisted chemical vapour deposition on polycrystalline nickel foils. It is initiated by the comparison of the mechanisms in CVD and plasma-assisted CVD on a nickel substrate and focusses on the development of a growth model for both sides of the substrate within the experimental results. In detail, the differences in graphene growth at the front and at the back side of the substrate are investigated and correlated to specific influence factors. It is shown that growth mode as well as expansion and quality of graphene sheets can be adjusted by process temperature and time respectively since carbon solubility and diffusion in nickel both hold strong temperature and time dependencies. The strong time dependence of graphene growth is further indicative of a reconstructional nature of graphene formation, which is further discussed in the developed growth model. In addition the influence of the substrate is investigated by comparing results from graphene growth on polycrystalline nickel foils and nickel single crystal(111) substrates, as well as graphene on nickel (synthesized graphene) and silicon dioxide substrates (transferred graphene). Raman mappings are demonstrated to confirm the quality of the synthesized graphene.