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P: Fachverband Plasmaphysik
P 27: Low Temperature Plasmas
P 27.3: Fachvortrag
Donnerstag, 16. März 2017, 14:45–15:10, HS 2010
Coupling mechanisms in inductive discharges with RF substrate bias driven at consecutive harmonics with adjustable relative phase — •Birk Berger1,2, Thomas Steinberger1, Mark Koepke1, Thomas Mussenbrock2, and Julian Schulze1,3 — 1Department of Physics, West Virginia University, Morgantown, USA — 2Electrodynamics and Physical Electronics Group, Brandenburg University of Technology, Cottbus, Germany — 3Institute for Electrical Engineering, Ruhr-University Bochum, Germany
In plasma etching applications a combination of inductively and capacitively coupled RF plasmas are commonly used. The reason is that the inductive coupling ensures a high plasma density, while the capacitive coupling allows for a control of the ion bombardment energy at a substrate. In our study we experimentally investigate the coupling mechanisms between a phase-locked inductive and capacitive source driven at 13.56 MHz and 27.12 MHz, respectively. In the E-Mode the DC self-bias at the electrode can be controlled via the Electrical Asymmetry Effect by adjusting the phase between both sources. In the transition region from E- to H-Mode the ion flux to the electrode was measured using a Retarding Field Energy Analyzer. The ion flux was found to be affected by the value of relative phase, which can be explained by the electron power dissipation dynamics during one RF cycle using Phase Resolved Optical Emission Spectroscopy.