Dresden 2017 – scientific programme

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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 49: Poster: Surfaces, Interfaces, Thin Films, Nanostructures

CPP 49.6: Poster

Wednesday, March 22, 2017, 18:30–21:00, P2-OG1

Stack of ultrathin Gallium layers — •Sebastian Runde, Heiko Ahrens, and Christiane A. Helm — Inst. of Physics, Greifswald University, D-17487 Greifswald

Fabrication of ultrathin conductive layers is important for many technological applications. We describe a forced wetting method for the formation of ca. 3 nm thin gallium layers that extent up to 10 cm². Optical and atomic force microscopy image the layers on different length scales. X-ray reflectivity measurements show that the Ga layers immediately form a sub-nm thick oxide coating at the film/air surface under ambient conditions. Different substrates are used successfully (Si wafers, partially oxidized Si wafers, borosilicate glass). Up to five layers can be formed by forced wetting on top of each other. According to X-ray reflectivity, the repeat distance of the Ga layers in the stack is 2.7-2.8 nm.