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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 9: Organic Electronics and Photovoltaics II: Doping (joint session CPP/DS/HL, organized by CPP)

CPP 9.11: Vortrag

Montag, 20. März 2017, 18:00–18:15, ZEU 260

Drift of Dopants in Organic Semiconductors — •Lars Mueller^1,2,3, Seon-Young Rhim^1,3, Vipilan Sivanesan^1,3, Dongxiang Wang¹, Sebastian Beck^1,3, Annemarie Pucci^1,3, Wolfgang Kowalsky^1,2,3, and Robert Lovrincic^1,2 — ¹InnovationLab, Heidelberg, Germany — ²Institute for High-Frequency Technology, TU Braunschweig, Germany — ³Kirchhoff Institute for Physics, Heidelberg University, Germany

Electrical doping of organic semiconductors is widely applied to fabricate high performance organic electronic devices. The usually unwanted but still prevalent effect of dopant mobility in organic semiconductors is known for various dopant molecules in terms of diffusion towards a stable equilibrium. A mostly neglected effect is the influence of operating conditions that can cause a drift of dopants additionally to the known diffusion. We study this drift behavior and compare different dopant-host combinations, starting from Poly(3-hexylthiophen-2,5-diyl) (P3HT) doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) to larger dopant molecules and different host materials. We find a dynamic drift-process that can be utilized to deliberately create highly doped and almost undoped regions within one thin film, resulting in a spatially altered conductivity. To demonstrate the applicability, we show first data of a proof-of-principle memory device that is based on a spatially controlled dopant distribution.