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DF: Fachverband Dielektrische Festkörper

DF 13: SYNS - Symposium Nanostructuring Beyond Conventional Lithography
(MI with DS, DF, HL, MM and VA)

DF 13.4: Hauptvortrag

Mittwoch, 22. März 2017, 16:45–17:15, HSZ 02

Nanometer accurate topography patterning using thermal Scanning Probe Lithography — •Armin W. Knoll — IBM Research - Zurich, Switzerland

In thermal Scanning Probe Lithography (t-SPL) [1-5] a heated tip with an apex radius of less than 5 nanometers is used to locally evaporate organic resists and thereby create well defined patterns. Key features of t-SPL are linear patterning speeds of up to 20 mm/s [3] and a resolution of < 10 nm half pitch in resist and < 15 nm after pattern transfer to the substrate [4]. High precision device fabrication is possible due to overlay accuracies of < 5 nm [5]. In addition, 3D topography patterning with ~1 nm (1 sigma) depth accuracy was demonstrated [2].

Examples of unique devices fabricated by t-SPL will be discussed, such as Gaussian shaped mesas in optical micro-cavities for light confinement and Brownian motors for transport and separation of nano-particles in fluids.

References:

[1] D. Pires et al. Science, 328, 732-735 (2010).

[2] R. Garcia et al. Nature Nanotechnology 9, 577-587 (2014).

[3] P. Paul et al. Nanotechnology, 22, 275306 (2011).

[4] H. Wolf et al. J. Vac. Sci. Technol. B, 33, 02B102 (2015).

[5] C. Rawlings et al. ACS Nano, 9, 6188-6195 (2015).