Dresden 2017 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 19: Glasses and Glass Transition (CPP with DF)

DF 19.8: Vortrag

Freitag, 24. März 2017, 12:00–12:15, ZEU 118

Glass transitions, semiconductor-metal (SC-M) transitions and fragilities in Ge-V-Te (V=As, or Sb) liquid alloys: the difference one element can make — •Shuai Wei¹, Garrett Coleman², Pierre Lucas², and C.Austen Angell¹ — ¹Arizona State University — ²University of Arizona

Glass transition temperatures (Tg) and liquid fragilities are measured along a line of constant Ge content in the system Ge-As-Te, and contrasted with the lack of glass-forming ability in the twin system Ge-Sb-Te at the same Ge content. The one composition established as free of crystal contamination in the latter system shows a behavior opposite to that of more covalent system. Comparison of Tg vs bond density in the three systems Ge-As-chalcogen differing in chalcogen i.e. S, Se, or Te, shows that as the chalcogen becomes more metallic, the bond density effect on Tg becomes systematically weaker, with a crossover at <r> = 2.3. When the more metallic Sb replaces As at <r> greater than 2.3, incipient metallicity rather than directional bond covalency apparently gains control of the physics. This leads us to an examination of the electronic conductivity and, then, semiconductor-to-metal (SC-M) transitions, with their associated thermodynamic manifestations, in relevant liquid alloys. The thermodynamic components control liquid fragility and cause fragile-to-strong transitions during cooling. We tentatively conclude that liquid state behavior in phase change materials (PCMs) is controlled by liquid state SC-M transitions that have become submerged below the liquidus surface. The analogy to supercooled water phenomenology is highlighted.