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DF: Fachverband Dielektrische Festkörper
DF 8: Ferroics - Domains, Domain Walls and Skyrmions I
DF 8.13: Vortrag
Dienstag, 21. März 2017, 13:15–13:30, WIL B321
Reconfigurable domain wall conductance by inclination tuning — •Thomas Kämpfe1, Bo Wang2, Scott Johnston3, Eric Y. Ma3, Alexander Haußmann1, Hui Hu4, Zhi-Xun Shen3, Long-Qing Chen2, and Lukas M. Eng1 — 1Institute of Applied Physics and Center for Advancing Electronics (CFAED), TU Dresden, Germany — 2Department of Materials Science and Engineering, Pennsylvania State University, University Park, USA — 3Department of Applied Physics and Geballe Laboratory for Advanced Materials (GLAM), Stanford University, USA — 4School of Physics, Shandong University, Jinan, China
We report on ferroelectric domain wall (DW) conductance in lithium niobate thin films that allows reproducibly writing/erasing DWs by proper voltage adjustment. The DWs are conductive and show persistent DWC at least for two months. Mandatory to DW conductance is a minimal DW inclination that promotes electron transport without illumination [1]. We proof this dependence indirectly: we compare cAFM measurements for domains written at various writing voltages and compare it with the simulated inclination angles obtained from phase-field modeling, which shows a decrease in inclination the larger the writing voltage. The conductance was further investigated by scanning-microwave impedance microscopy (sMIM) revealing a conductivity of about 100 to 1000 S/m at 1 GHz, hence an increase of about 1011 to the bulk conductivity of about 10−8 S/m.
[1] M.Schröder et.al., Adv. Funct. Mater. 22, (18), 3936 (2012)