Dresden 2017 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 9: Poster Session
DF 9.10: Poster
Tuesday, March 21, 2017, 14:00–16:00, P1C
Fabrication of silicon nano-structures for dielectric laser accelerators — •Peyman Yousefi1, Joshua McNeur1, Martin Kozák1, Florentina Gannott2, and Peter Hommelhoff1,2 — 1Department Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Erlangen — 2Max-Planck-Institut für die Physik des Lichts, Erlangen
Dielectric laser accelerators (DLA) - a novel class of accelerator in which electrons interact with laser-induced accelerating near-fields in the vicinity of dielectric nanostructures - have recently demonstrated accelerating gradients in the GeV/m regime. As such, DLAs may enable accelerator applications not available to classical RF accelerators [1,2]. However there are still major challenges in order to maintain the interaction between electrons and near-fields over longer distances (necessary for larger energy gains) and to achieve even higher accelerating gradients. Developing new nano-structures is essential to solve these issues. In this work we discuss the fabrication of different geometries of silicon such as single side gratings, dual circular pillars and sinusoidal pillars gratings that aim to achieve high gradients and energy gains. E-beam lithography and reactive ion etching (RIE) are used to fabricate the nano-structures. Future designs to address focusing and tapered structures are also discussed.
[1]England R. Joel, et al. Dielectric laser accelerators. Reviews of Modern Physics 2014, 86(4): 1337-1389.
[2]John Breuer, Peter Hommelhoff. Laser-Based Acceleration of Nonrelativistic Electrons at a Dielectric Structure. PRL 2013, 111: 134803.