Dresden 2017 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 9: Poster Session
DF 9.21: Poster
Dienstag, 21. März 2017, 14:00–16:00, P1C
Giant resisitive switching by charged domain walls — •Thomas Kämpfe1, Bo Wang2, Scott Johnston3, Eric Y. Ma3, Alexander Haußmann1, Hui Hu4, Zhi-Xun Shen3, Long-Qing Chen2, and Lukas M. Eng1 — 1Institute of Applied Physics and Center for Advancing Electronics (CFAED), TU Dresden, Germany — 2Department of Materials Science and Engineering, Pennsylvania State University, University Park, USA — 3Department of Applied Physics and Geballe Laboratory for Advanced Materials (GLAM), Stanford University, USA — 4School of Physics, Shandong University, Jinan, China
We investigate the application of conductive domain walls (CDWs) in exfoliated thin-film lithium niobate (LNO) for resistive switching in a standard metal-ferroelectric-metal stack. An abrupt increase over at least 5 orders of magnitude in the unidirectional conductivity is observed when the voltage sweep approaches the coercive voltage. Local-scale measurements involving AFM techniques confirm that the conductivity indeed correlates with the formation of CDWs. The high- and low-resistance-states show a retention of >104 s and an endurance over 105 cycles with a resistance window of 104 and a high device homogeneity. The non-volatile current is tunable both by varying the writing voltage and exposure time, and indeed decreases for larger writing voltage. The transport mechanism was found to be space-charge limited, with temperature-dependent transport measurements confirming a small-electron polaron hopping. All these experiments are in good agreement with the developed phase-field modeling.