Dresden 2017 – scientific programme
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DS: Fachverband Dünne Schichten
DS 12: Focused Session: Inhomogeneous Materials for Solar Cells II
DS 12.2: Invited Talk
Monday, March 20, 2017, 15:30–16:00, CHE 89
Growth of InGaN film and monolayer by molecular beam epitaxy — •Xinqiang Wang1, Zhaoyin Chen1, Xiantong Zheng1, Xin Rong1, Bowen Sheng1, Bo Shen1, Tobias Schulz2, Martin Albrecht2, Frank Bertram3, and Jürgen Christen3 — 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China — 2Leibniz-Institute for Crystal Growth, Berlin, Germany — 3Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany
InGaN, which nearly perfectly matches the solar spectrum, is a good candidate for high efficiency solar cell. However, high quality InGaN, in particular with high In content, is difficult to realize. To solve this problem, Yoshikawa et al proposed to use (InN)m/(GaN)n digital alloys instead of random InGaN alloys making the InGaN in long range ordering. This approach attracted great interest due to its potential application in devices such as solar cells. Unfortunately, the growth is difficult as well since it needs the atomical level control at either InN or GaN layer. In this talk, we will first report our effort on fabricating solar cells by using InGaN/GaN multiple quantum wells, where a positive photovoltaic efficiency temperature coefficient up to 423K have bee observed. Then, we focus on growth of InGaN films with different In compositions. An InGaN layer with In composition changed from 0-100% on the same wafer have been grown as well. Finally, we will first report manipulation of In(Ga)N monolayer by molecular beam epitaxy.