Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 13: Phase Change/Resistive Switching

DS 13.1: Talk

Monday, March 20, 2017, 15:00–15:15, CHE 91

Towards Shot Noise Study of Hafnium Oxide Resistive Switching — •Donato Civita^{1, 2}, Carlos Sabater², and Jan van Ruitenbeek² — ¹Institute of Chemistry, Graz, Austria — ²Leiden Institute of Physics, Leiden, The Netherlands

The continuous down-scaling of memory devices led to an increased interest in the Resistive Random Access Memory (ReRAM). Such a memory device consists of an ultrathin insulating layer between two metal electrodes where the insulating layer has the resistive switching (RS) properties, i.e. the ability to reversibly change its resistance as a result of an electrical stimulus. The switching mechanism is considered to be based on the formation and dissolution of a conducting filament surrounded by the insulating matrix. However, the nature of the conducting lament is still unclear.

In the present work, we design and produce novel RS nano-devices, consisting of hafnium oxide as insulating material and platinum as material for the metal electrodes. We describe in detail the fabrication procedure and characterization of the nano-devices and their RS behavior. A novel method to investigate the RS system, the Shot Noise measurement, is presented. The Shot Noise experiments will be presented together with the results of conductance measurements, with the goal to obtain insight into the nature of the conducting filaments.