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DS: Fachverband Dünne Schichten

DS 13: Phase Change/Resistive Switching

DS 13.2: Vortrag

Montag, 20. März 2017, 15:15–15:30, CHE 91

Nonvolatile resistive switching to 10 ^6 OFF/ON resistance ratio in yttrium manganite thin films with downscaled top electrodes — •Venkata Rao Rayapati¹, Agnieszka Bogusz^1,2, Nan Du¹, Danilo Bürger¹, Ilona Skorupa^1,2, Stefan E Schulz³, Oliver G Schmidt^1,4, and Heidemarie Schmidt^1,3 — ¹Materials systems for Nanoelectronics, Chemnitz University of Technology, 09126 Chemnitz, Germany — ²Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany — ³Fraunhofer-Institut für Elektronische Nanosysteme, Abteilung Back-End of Line, Technologie-Campus 3, 09126 Chemnitz, Germany — ⁴Institute for Integrative Nanosciences, IFW Dresden, Dresden, Germany

Polycrystalline, hexagonal YMnO3 (YMO) thin films grown by pulsed laser deposition with ceramic target [1] exhibit nonvolatile unipolar resistive switching (RS). In this work, we investigate RS properties of YMO thin films with different chemical compositions on large-scale Pt and Pt/Ti bottom electrodes (BE). Circular Au and Al top electrodes (TE) of different size have been prepared by magnetron sputtering and e-beam evaporation, respectively. SET and RESET bias during RS strongly depend on ceramic target and bottom electrode. Endurance of YMO with Al TE is improved in comparison to Au TE. The observed increasing ROFF/RON ratio with decreasing size of Al TE can be related with increasing ROFF with decreasing size of Al TE due to decreased tendency for local shunting. [1] A. Bogusz et al., AIP Advances 4 (2014)