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DS: Fachverband Dünne Schichten

DS 13: Phase Change/Resistive Switching

DS 13.3: Vortrag

Montag, 20. März 2017, 15:30–15:45, CHE 91

Characterization of the early stages in the MBE-growth of phase change materials — •Marvin Kaminski¹, Marc Pohlmann¹, Matti Wirtssohn¹, Abderrafii Moktad¹, Peter Jost¹, and Matthias Wuttig^1,2,3 — ¹I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany — ²JARA-FIT, RWTH Aachen University, Germany — ³3JARA-Insitut Energy-efficient information technology (PGI-10), FZ Jülich, 52428 Jülich, Germany

In chalcogenide-based phase-change materials (PCMs), the switching between the amorphous and the crystalline phase is fast, reversible, and concomitant with a prominent contrast in physical properties. PCMs are, therefore, among the most promising candidates for future non-volatile electronic memory applications. Recent developments such as the concept of interfacial phase-change materials (IPCMs), where thin layers of Sb2Te3 and GeTe are stacked as superlattices, call for highly-textured or even epitaxial films, which can be produced by sputter deposition, MOPVE, and molecular beam epitaxy (MBE). In this work, we study thin MBE-grown chalcogenide layers on Si(111). The combination of in-situ RHEED and ARHEED as well as ex-situ XRD, SEM, and AFM measurements provides insights on the early stages of the growth process. As the early stages of the growth govern the overall quality of the film to a large extent, proper understanding is crucial for further optimization.