Dresden 2017 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 13: Phase Change/Resistive Switching
DS 13.6: Talk
Monday, March 20, 2017, 16:15–16:30, CHE 91
Effect of heavy ion radiation on resistive switching in HfOx based RRAM devices grown by MBE — •Stefan Vogel1, S. U. Sharath1, J. Lemke1, E. Hildebrandt1, C. Trautmann2, and L. Alff1 — 1Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany — 2Materials Research Department, Gesellschaft für Schwerionenforschung (GSI), 64291 Darmstadt, Germany
Recently, resistive random access memory (RRAM) gained a lot of attention due to its promising performances: fast switching times, high endurance, and low power consumption. RRAM devices are non-volatile memories based on switching between a stable low resistance state (LRS) and a high resistance state (HRS) by conducting filaments which are formed and disrupted by applying voltages of different polarities. RRAM devices usually have a simple metal-insulator-metal stack structure. Hafnium oxide (HfO2) is promising for embedded RRAM due to its established CMOS compatibility. Also, its simplicity and the possibility of 3D-stacks makes RRAM being an attractive technology for increased device density, potentially overcoming existing limitations and following Moore‘s law for floating gate metal oxide semiconductor field effect transistors. In-situ stacks of TiN/HfOx with deficient oxygen stoichiometry were deposited by molecular beam epitaxy (MBE) using radical sources with different gases (oxygen and nitrogen). Device stacks of Pt/HfOx/TiN were investigated towards their switching characteristics before and after heavy ion radiation utilizing Au-ions with energies of 48 MeV and fluences up to 1012 ions/cm2.