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DS: Fachverband Dünne Schichten

DS 13: Phase Change/Resistive Switching

DS 13.7: Vortrag

Montag, 20. März 2017, 16:30–16:45, CHE 91

Reducing variability by introduction of thin TiO₂-layers into HfO₂ switching cells — •Alexander Hardtdegen¹, Camilla La Torre², Stephan Menzel¹, Rainer Waser^1,2, and Susanne Hoffmann-Eifert¹ — ¹Peter Grünberg Institute and JARA-Fit, Forschungszentrum Jülich GmbH, Jülich, Germany — ²Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany

Non-volatile resistive random access memory (ReRAM) cells are interesting for storage class memories, where for industrial purpose HfO₂ is typically used as oxide switching layer. The main challenge of HfO₂ is the slightly increased variability.

By designing bilayer cells combining HfO₂ with TiO₂, improvements of switching behavior can be observed. The devices switch more stable and a gradual SET with self-limiting behavior becomes visible. In contrast to this, the RESET becomes more abrupt when switching with higher current compliances. This behavior can be explained by an intrinsic stack-dependent series resistance, which can be quantified by a numerical method and also verified by physics-based compact model simulations.

In this study, the influence of the HfO₂/TiO₂ ratio is investigated in respect to the switching stability and the series resistance.