Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 21: Thin Film Characterisation: Structure Analysis and Composition II
DS 21.1: Vortrag
Dienstag, 21. März 2017, 09:30–09:45, CHE 91
Analysis of domain formation of epitaxial chalcogenide thin films — •Marc Pohlmann1, Marvin Kaminski1, Matti Wirtssohn1, Abderaffi Moktad1, Oana Cojocaru-Mirédin1, Peter Jost1, and Matthias Wuttig1,2 — 1I. Institute of Physics, Physics of New Materials, RWTH Aachen University, 52056 Aachen, Germany — 2Sommerfeldstr. 14
Many chalcogenide alloys can be employed in phase-change memories because their optical and electrical properties differ strongly between their crystalline and amorphous phases. Interest in highly-textured or even epitaxially-grown chalcogenide thin films is fueled by the recent discovery of the advantageous memory-switching properties of chalcogenide superlattices, so-called interfacial phase-change memories (IPCMs), as well as by the topological properties of such films. High quality thin films can be produced by molecular beam epitaxy. However, in many material systems different rotational domains lead to the formation of grain boundaries or twin defects. To reduce these defects, it is essential to understand why and how the different domains are formed.
Therefore, in this work we combined electron backscattering diffraction (EBSD) with XRD to attain a sound understanding of the local domain structure and the mechanisms of domain formation in MBE-grown chalcogenide thin films.